cbr35f-010p series fast recovery silicon bridge rectifiers 35 amp, 100 thru 600 volt description: the central semiconductor cbr35f-010p series devices are silicon, single phase, full wave bridge rectifiers designed for fast recovery applications. the molded epoxy case has a built-in metal baseplate for heat sink mounting. the device utilizes standard 0.25 faston terminals. marking: full part number maximum ratings: (t a =25c unless otherwise noted) cbr35f symbol -010p -020p -040p -060p units peak repetitive reverse voltage v rrm 100 200 400 600 v dc blocking voltage v r 100 200 400 600 v rms reverse voltage v r(rms) 70 140 280 420 v average forward current (t c =60c) i o 35 a peak forward surge current i fsm 400 a rms isolation voltage (case to lead) v iso 2500 vac operating and storagejunction temperature t j , t stg -65 to +150 c thermal resistance jc 1.5 c/w electrical characteristics per diode: (t a =25c) symbol test conditions min max units i r v r =rated v rrm 10 a v f i f =17.5a 1.3 v t rr i f =0.5a, i r =1.0a, i rr =0.25a (100v, 200v, 400v) 200 ns t rr i f =0.5a, i r =1.0a, i rr =0.25a (600v) 350 ns case fp r1 (4-november 2013) www.centralsemi.com
cbr35f-010p series fast recovery silicon bridge rectifiers 35 amp, 100 thru 600 volt case fp - mechanical outline marking: full part number www.centralsemi.com r1 (4-november 2013)
|
